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| FGD3N60LSD IGBT July 2005 FGD3N60LSD IGBT Features * High Current Capability * Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A * High Input Impedance Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Applications * HID Lamp Applications * Piezo Fuel Injection Applications C C G G E D-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Derating Factor Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C FGD3N60LSD 600 20 6 3 25 3 25 40 0.32 -55 to +150 -55 to +150 250 Units V V A A A A A W W/C C C C Thermal Characteristics Symbol RJC (IGBT) RJA Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. --- Max. 3.1 100 Units C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGD3N60LSD Rev. A FGD3N60LSD IGBT Package Marking and Ordering Information Device Marking FGD3N60LSD FGD3N60LSD Device FGD3N60LSDTM FGD3N60LSDTF Package D-PAK D-PAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown] Voltage Collector Cut-Off Current G-E Leakage Current TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ---- -0.6 --- --250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A, IC = 6A, VGE = 10V VGE = 10V 2.5 --3.2 1.2 1.8 5.0 1.5 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, VGE = 0V, f = 1MHz ---185 20 5.5 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance Measured 5mm from PKG VCE = 480 V, IC = 3A, VGE = 10V VCC = 480 V, IC = 3A, RG = 470, VGE = 10V, Inductive Load, TC = 125C VCC = 480 V, IC = 3A, RG = 470, VGE = 10V, Inductive Load, TC = 25C ------------------40 40 600 600 250 1.00 1.25 40 45 620 800 300 1.9 2.2 12.5 2.8 4.9 7.5 ------------------ns ns ns ns uJ mJ mJ ns ns ns ns uJ mJ mJ nC nC nC nH FGD3N60LSD Rev. A 2 www.fairchildsemi.com FGD3N60LSD IGBT Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr C = 25C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 3A Test Conditions TC = 25C TC = 100C IF = 3A, di/dt = 100A/us VR = 200V TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C Min. --------- Typ. 1.5 1.55 234 -2.64 -309 -- Max. 1.9 -------- Units V ns A nC FGD3N60LSD Rev. A 3 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 30 Common Emitter T C = 25C 20V 15V Figure 2. Typical Output Characteristics 30 Common Emitter TC = 125C Collector Current, IC [A] 24 Collector Current, IC [A] 10V 24 20V 15V 18 V GE = 8V 18 10V VGE = 8V 12 12 6 6 0 0 2 4 6 8 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Collector-Emitter Voltage, V CE [V] Figure 3. Typical Output Characteristics 10 Common Emitter V GE = 10V Figure 4. Transfer Characteristics 10 Common Emitter V CE = 20V Collector Current, IC [A] T C = 125C 6 Collector Current, IC [A] 8 T C = 25C 8 T C = 25C T C = 125C 6 4 4 2 2 0 0.1 1 Collector-Emitter Voltage, V CE[V] 10 0 1 10 Gate-Emitter Voltage, V GE[V] Figure 5. Saturation Voltage vs. Case 3 Com m on Em itter V GE = 10V Figure 6. Capacitance Characteristics 600 Com m on Em itter V GE = 0V, f = 1MHz T C = 25C Collector-Emitter Voltage, VCE [V] 500 2 IC = 6A Capacitance [pF] 400 Cies 300 Coes 200 Cres 1 IC = 3A I C = 1.5A 100 0 0 30 60 90 120 150 0 1 10 Case Temperature, T C [C] Collector - Emitter Voltage, V C E [V] FGD3N60LSD Rev. A 4 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics Figure 7. Gate Charge 12 (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance 1 0 00 C om m on E m itte r V C C = 48 0V , V GE = 1 0V IC = 3 A T C = 25 C T C = 12 5 C Com m on Em itter R L = 160 Vcc = 480V T C = 25C 10 Gate - Emitter Voltage, VGE [V] 8 6 Switching Time [ns] 1 00 Ton Tr 4 2 0 0 2 4 6 8 10 12 10 2 00 40 0 6 00 8 00 10 0 0 Gate Charge, Q g [nC] G ate R esistance , R G [ ] Figure 9. Turn-Off Characteristics vs. Gate Resistance 10000 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A T C = 25C Switching Time [ns] Toff 1000 Tf T C = 125C Figure 10. Switching Loss vs. Gate Resistance 10000 Eoff Switching Loss [J] 1000 Eon 100 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A T C = 25C T C = 125C 100 200 400 600 800 1000 10 Gate Resistance, R G [ ] 200 400 Gate Resistance, R G [ ] 600 800 1000 Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter Vcc = 480V, V GE = 10V 100 R G = 470 T C = 125C T C = 25C Ton Figure 12. Turn-Off Characteristics vs. Collector Current 1000 Switching Time [ns] Toff Tf Tr Switching Time [ns] Common Emitter Vcc = 480 V, V GE = 10V R G = 470 T C = 25C 10 2 Collector Current, IC [A] 3 4 100 2 T C = 125C Collector Current, IC [A] 3 4 FGD3N60LSD Rev. A 5 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Common Emitter Vcc = 480 V, VGE = 10V RG = 470 TC = 25C Figure 14. Forward Characteristics 100 Tc = 25C Tc = 100C Forward Current, IF [A] TC = 125C 10 Switching Loss [J] 1000 Eoff 1 Eon 100 0.1 2 3 Collector Current, IC [A] 4 0 1 2 3 4 Forward Voltage Drop, VF [V] Figure 15. Forward Voltage Drop Vs Tj 2.8 Figure 16. SOA Characteristics 100 Ic MAX (Pulsed) Forward Voltage Drop, VF [V] 2.4 Collector Current, Ic [A] 10 Ic MAX (Continuous) 100s 1ms 1 DC Operation 50s IF=6 A 2.0 1.6 IF=3 A IF=1.5 A 0.1 1.2 Single Nonrepetitive Pulse Tc = 25C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 0.01 25 50 75 100 125 Junction Temperature, Tj [C] Collector - Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 10 0 .5 Thermal Response [Zthjc] 1 0 .2 0 .1 0 .0 5 0 .1 0 .0 2 s in g le p u ls e 0 .0 1 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e cta ngula r P uls e D ura tio n [s e c] FGD3N60LSD Rev. A 6 www.fairchildsemi.com FGD3N60LSD IGBT Mechanical Dimensions D-PAK 6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10 0.60 0.20 6.10 0.20 2.70 0.20 9.50 0.30 0.91 0.10 0.80 0.20 MAX0.96 2.30TYP [2.300.20] 0.76 0.10 2.30TYP [2.300.20] 0.89 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (0.70) (0.90) (0.10) (3.05) 6.10 0.20 9.50 0.30 2.70 0.20 (2XR0.25) 0.76 0.10 Dimensions in Millimeters FGD3N60LSD Rev. A 7 (1.00) www.fairchildsemi.com 6.60 0.20 (5.34) (5.04) (1.50) MIN0.55 FGD3N60LSD IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FGD3N60LSD Rev. A www.fairchildsemi.com |
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